Chip- and System-Level Reliability on SiC-based Power Modules

The blocking voltage, switching frequency and temperature tolerance of power devices have been greatly improved due to the revolution of wide bandgap (WBG) materials, such as silicon carbide (SiC) and gallium nitride (GaN). Owing to the development of SiC-based power devices, the power rating, operating voltage, and power density of power modules have been significantly improved. However, the reliability of SiC-based power modules has not been fully explored yet. Thus, this dissertation focuses on the chip- and system-level reliability on SiC-based power modules. For chip-level reliability, this work focuses on on-chip SiC ESD protection devices for SiC-based integrated circuits (ICs). In order to develop SiC ESD protection devices, SiC-based Ohmic contact and ion implantation have been studied. Nickel/Titanium/Aluminum (Ni/Ti/Al) metal stacks were deposited on SiC substrates to form Ohmic contact. Circular transfer length method (CTLM) structures were fabricated to characterize contact resistivity. Ion implantation was designed and simulated by Sentraurus technology computer aided design (TCAD) software. Secondary-ion mass spectrometry (SIMS) results show a good match with the simulation results. In addition, SiC ESD protection devices, such as N-type metal-oxide-semiconductor (NMOS), laterally diffused metal-oxide-semiconductor (LDMOS), high-voltage silicon controlled rectifier (HV-SCR) and low-voltage silicon controlled rectifier (LV-SCR), have been designed. Transmission line pulse (TLP) and very fast TLP (VF-TLP) measurements were carried out to characterize their ESD performance. The proposed SiC-based HV-SCR shows the highest failure current on TLP measurement and can be used as an area-efficient ESD protection device. On the other hand, for system-level reliability, this dissertation focuses on the galvanic isolation of high-temperature SiC power modules. Low temperature co-fired ceramics (LTCC) based high-temperature optocouplers were designed and fabricated as galvanic isolators. The LTCC-based high-temperature optocouplers show promising driving capability and steady response speed from 25 ºC to 250 ºC. In order to verify the performance of the high-temperature optocouplers at the system level, LTCC-based gate drivers that utilize the high-temperature optocouplers as galvanic isolators were designed and integrated into a high-temperature SiC-based power module. Finally, the high-temperature power module with integrated LTCC-based gate drivers was characterized by DPTs from 25 ºC to 200 ºC. The power module shows reliable switching performance at elevated temperatures

Chip- and System-Level Reliability on SiC-based Power Modules

The blocking voltage, switching frequency and temperature tolerance of power devices have been greatly improved due to the revolution of wide bandgap (WBG) materials, such as silicon carbide (SiC) and gallium nitride (GaN). Owing to the development of SiC-based power devices, the power rating, operating voltage, and power density of power modules have been significantly improved. However, the reliability of SiC-based power modules has not been fully explored yet. Thus, this dissertation focuses on the chip- and system-level reliability on SiC-based power modules. For chip-level reliability, this work focuses on on-chip SiC ESD protection devices for SiC-based integrated circuits (ICs). In order to develop SiC ESD protection devices, SiC-based Ohmic contact and ion implantation have been studied. Nickel/Titanium/Aluminum (Ni/Ti/Al) metal stacks were deposited on SiC substrates to form Ohmic contact. Circular transfer length method (CTLM) structures were fabricated to characterize contact resistivity. Ion implantation was designed and simulated by Sentraurus technology computer aided design (TCAD) software. Secondary-ion mass spectrometry (SIMS) results show a good match with the simulation results. In addition, SiC ESD protection devices, such as N-type metal-oxide-semiconductor (NMOS), laterally diffused metal-oxide-semiconductor (LDMOS), high-voltage silicon controlled rectifier (HV-SCR) and low-voltage silicon controlled rectifier (LV-SCR), have been designed. Transmission line pulse (TLP) and very fast TLP (VF-TLP) measurements were carried out to characterize their ESD performance. The proposed SiC-based HV-SCR shows the highest failure current on TLP measurement and can be used as an area-efficient ESD protection device. On the other hand, for system-level reliability, this dissertation focuses on the galvanic isolation of high-temperature SiC power modules. Low temperature co-fired ceramics (LTCC) based high-temperature optocouplers were designed and fabricated as galvanic isolators. The LTCC-based high-temperature optocouplers show promising driving capability and steady response speed from 25 ºC to 250 ºC. In order to verify the performance of the high-temperature optocouplers at the system level, LTCC-based gate drivers that utilize the high-temperature optocouplers as galvanic isolators were designed and integrated into a high-temperature SiC-based power module. Finally, the high-temperature power module with integrated LTCC-based gate drivers was characterized by DPTs from 25 ºC to 200 ºC. The power module shows reliable switching performance at elevated temperatures

Size-dependent parametrisation of active vibration control for periodic piezoelectric microplate coupled systems: A couple stress-based isogeometric approach

We propose a couple stress based isogeometric analysis (IGA) model for the study of active vibration control in periodic piezoelectric microplate coupled systems. The model integrates the modified couple stress elasticity, which accounts for microstructure effects but necessitates the implementation of at least C1 continuous finite elements, and the IGA finite element, which fulfils the element continuity criterion. This complementary combination enables size-dependent parametrisation of the feedback vibration controller for piezoelectric microplate coupled systems. Therefore, we examined a two-parameter control relationship that modulates the voltage gain within the sensor-to-actuator circuit in relation to mass and stiffness with the account for varying problem sizes. To assess the vibration properties of the microplate system, we performed bandgap analysis and compared the results to transient responses. Additionally, we investigated the impact of couple stress on bandgaps and devised a computational methodology for determining optimal control parameters concerning the desired vibration bandgaps. Our computational procedure serves as valuable tool for assisting in the parametrisation of feedback vibration controllers in microplates with tunable vibration bandgaps

Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver

The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially in high-temperature applications. In this paper, a novel low-cost discrete SMD component gate driver embedded in a SiC MOSFET power module is introduced. A newly integrated packaging structure has been introduced and proved to be efficient in reducing package-related turn-on loss and turn-off parasitic ringing. However, the gate propagation delay and optocoupler on-chip weak output signal in such a structure become limitations for further pushing the operating frequency and the output current level for high-efficiency power conversion. The electrical characterization of low-temperature co-fired ceramic (LTCC) gate drivers is covered. Furthermore, a 1200 V/120A SiC MOSFET phase-leg power module utilizing high-temperature packaging technologies has been developed. The static characteristics, switching performance, and thermal behavior of the fabricated power module are fully evaluated under operating temperature variations of up to 250 °C

Student perceptions toward virtual reality training in dental implant education

Objectives Both the shortage of professional teaching resources and the expensive dental implant supplies impede the effective training of dental undergraduate in implantology. Virtual reality (VR) technology may provide solutions to solve these problems. This pilot study was implemented to explore the usability and acceptance of a VR application in the training of dental implant among dental students at the Jinan University School of Stomatology. Methods We designed and developed a VR system with head-mounted displays (HMDs) to assist dental implant training. Undergraduate dental students were invited to experience a 30-minute “Introduction to dental implants” VR-HMDs training module. A total of 119 dental students participated the training. Firstly, the VR interactive training on dental implant was described, illustrated and practiced. Next, a system usability scale (SUS) survey was used to verify the usability and feasibility of the VR application on training dental students. Finally, the participants were given a questionnaire to provide their perceptions and feedback of the usefulness of the VR application for training dental implant skills. Results The SUS score was 82.00 ± 10.79, indicating a top 10 percentage ranking of the system’s usabilitys. The participants’ answers to the questionnaire reflected most of them exhibited strong interests in the VR system, with a tendency that the female students were more confident than the male in manipulating the VR system. The participants generally acknowledged the usefulness of VR dental implants, ranking VR value above the traditional laboratory operations, and a preference for using the VR system on learning other skills. They also gave valuable suggestions on VR dental implants for substantial improvement. However, some students were not strongly positive about the VR training in this study, the reason might lie in a more theoretical module was selected for testing, which impacted the students’ ratings. Conclusions In this study we revealed the feasibility and usability of VR applications on training dental implant among undergraduate dental students. This pilot study showed that the participants benefited from the dental implant VR training by practicing the skills repeatedly. The feedback from student participants affirmed the advantages and their acceptance of the VR application in dental education. Especially, the VR-based technology is highly conducive to clinical operating skills and surgical procedures-focused training in medical education, indicating that the VR system should be combined with the traditional practice approach in improving dental students’ practical abilities

miR-24-3p/FGFR3 Signaling as a Novel Axis Is Involved in Epithelial-Mesenchymal Transition and Regulates Lung Adenocarcinoma Progression

Our previous studies showed that Fibroblast growth factor receptor 3 (FGFR3) contributed to cell growth in lung cancer. However, the correlation between FGFR3 and tumor progression, coupled with the underlying mechanisms, are not fully understood. The clinical significance of FGFR3 was determined in two cohorts of clinical samples (n=22, n=78). A panel of biochemical assays and functional experiments was utilized to elucidate the underlying mechanisms and effects of FGFR3 and miR-24-3p on lung adenocarcinoma progression. Upregulated FGFR3 expression indicated an adverse prognosis for lung adenocarcinoma individuals and promoted metastatic potential of lung adenocarcinoma cells. Owing to the direct regulation towards FGFR3, miR-24-3p could interfere with the potential of proliferation, migration, and invasion in lung adenocarcinoma, following variations of EMT-related protein expression. As a significant marker of EMT, E-cadherin was negatively correlated with FGFR3, of which ectopic overexpression could neutralize the antitumour effects of miR-24-3p and reverse its regulatory effects on EMT markers. Taken together, these findings define a novel insight into the miR-24-3p/FGFR3 signaling axis in regulating lung adenocarcinoma progression and suggest that targeting the miR-24-3p/FGFR3 axis could be an effective and efficient way to prevent tumor progression

Additional file 1: of Effect of SQW on the bladder function of mice lacking TRPV1

The quality control of Suoquanwan (SQW). (PDF 139 kb

Direct Reprogramming of Human Fibroblasts to Functional and Expandable Hepatocytes

SummaryThe generation of large numbers of functional human hepatocytes for cell-based approaches to liver disease is an important and unmet goal. Direct reprogramming of fibroblasts to hepatic lineages could offer a solution to this problem but so far has only been achieved with mouse cells. Here, we generated human induced hepatocytes (hiHeps) from fibroblasts by lentiviral expression of FOXA3, HNF1A, and HNF4A. hiHeps express hepatic gene programs, can be expanded in vitro, and display functions characteristic of mature hepatocytes, including cytochrome P450 enzyme activity and biliary drug clearance. Upon transplantation into mice with concanavalin-A-induced acute liver failure and fatal metabolic liver disease due to fumarylacetoacetate dehydrolase (Fah) deficiency, hiHeps restore the liver function and prolong survival. Collectively, our results demonstrate successful lineage conversion of nonhepatic human cells into mature hepatocytes with potential for biomedical and pharmaceutical applications